Samsung 990 PRO PCIe 4.0 NVMe SSD 2TB Internal SSD
Designed for tech enthusiasts, hardcore gamers and heavy-workload professionals who want blazing fast speed. Enjoy up to 50% improved performance per watt over 980 PRO, plus optimal power efficiency with max PCIe® 4.0 performance. Sequential read/write speeds up to 7,450/6,900 MB/s.
Highlights:
- Store as many documents, pictures and videos as you need with 2 TB capacity
- The high-read speed of 7450 MB/s maximizes system performance and saves time while you are doing complex tasks
- With the high-write speed of 6900 MB/s, get a quick response when updating or transferring files
- With PCI Express NVMe 4.0 x4 interface get superb reliability and high-speed data transfer
- With 256-bit AES encryption protect all your valuable data and keep your personal files safe & secure
Our ultimate SSD
Reach max performance with PCIe® 4.0.
Experience longer-lasting, opponent-blasting speed.
The in-house controller's smart heat control delivers supreme power efficiency while maintaining ferocious performance that always keeps you at the top of your game.
Maximized PCIe® 4.0 speed | Huge speed boost.
Get random read/write speeds that are 40%/55% faster than 980 PRO. Experience up to 1400K/1550K IOPS, while sequential read/write speeds up to 7450/6900 MB/s reach near the max performance of PCIe® 4.0. Fly high in gaming, video editing, 3D modeling, data analysis and more.
Breakthrough power efficiency | More power-efficient performance.
Use less power and get more performance. Enjoy up to 50% improved performance per watt over 980 PRO, plus optimal power efficiency with max PCIe® 4.0 performance.
Smart thermal control
Samsung's own nickel-coated high-end controller delivers effective thermal control and prevents sudden performance drops from overheating.
The champion maker
A more than 55% improvement in random performance enables faster loads for an ultimate gaming experience on PS5 and DirectStorage PC games.
Samsung Magician software | Unlock the full potential of 990 PRO.
Samsung's own nickel-coated high-end controller delivers effective thermal control and prevents sudden performance drops from overheating.
World's no. 1 flash memory brand
Experience the performance and reliability that you can only get from the world's number one brand for flash memory since 2003. All firmware and components, including Samsung's world-renowned DRAM and NAND, are produced in-house, allowing end-to-end integration for quality you can trust.
Specifications
- Capacity: 2TB (Formatted capacity is less due to O/S formatting, partitioning, applications, etc.)
- Form Factor: M.2 2280
- Interface: PCIe Gen 4.0 x4 NVMe 2.0
- Sequential Reads: Up to 7,450 MB/sec*
- Sequential Writes: Up to 6,900 MB/sec*
- Random IOPS:
4KB, QD32 Random Read: Up to 1,400,000 IOPS*
4KB, QD1 Random Read: Up to 22,000 IOPS*
4KB, QD32 Random Write: Up to 1,550,000 IOPS*
4KB, QD1 Random Write: Up to 80,000 IOPS*
- Cache Memory: 2GB Low Power DDR4 SDRAM
- Controller: Samsung in-house controller
- Flash Type: Samsung V-NAND 3-bit MLC
- AES Encryption: AES 256 - bit Encryption (Class 0) TCG / Opal IEEE1667 (Encrypted drive)
- Garbage Collection: Auto Garbage Collection Algorithm
- TRIM Support: Yes
- S.M.A.R.T. Support; Yes
- MTBF: 1.5 Million Hours Reliability (MTBF)
- Endurance Total Bytes Written: 1200TB Written
- Temperature Operating: 0 ~ 70° C
- Shock: 1,500G for 0.5ms (Half Sine Wave)
- Power Idle: 55mW max.
Average: 5.5W Typical
Maximum: 8.5W (Burst Mode)
- Voltage: 3.3V ± 5 % Allowable voltage
- Dimensions: (WxHxD) 80 x 22 x 2.3 mm
- Weight: Approx. 9g
